, d nc, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 thyristors BTY79 series glass-passivated silicon thyristors in metal envelopes, intended for use in power control circuits (e.g. light and motor control) and power switching systems. the series consistos of reverse polarity types (anode to stud) identified by a suffix r: BTY79-400r to 1000r. quick reference data BTY79-400r repetitive peak voltages ^drm^rrivl max- 400 500r 600r 500 600 800 r 800 1000r 1000 v average on-state current 't(av) max- 1^ a r. m.s. on-state current 'tfrms) max- non-repetitive peak on-state current 'tsm max. 16 a 150 a mechanical data fig. 1 to-64: with 10-32 unf stud ( 4,83 mm). dimensions in mm 1072 10-32 unf= t 483 j max r ? \ 1.98 ^ max 1 1 50 h v- ^ 35 093 max max 1023 * max 3a~i ? n n * r ? k(h) 21 72 .,'2w ?110- nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
BTY79 series ratings limiting values in accordance with the absolute maximum system (iec 134) anode to cathode non-repetitive peak off-state voltage (t<10ms) non-repetitive peak reverse voltage (t<5ms) repetitive peak voltages crest working voltages average on-state current (averaged over any 20 ms period) up to tmd = 85 c r.m.s. on-state current repetitive peak on-state current non-repetitive peak on-state current; t = 10 ms; half sine-wave; tj = 125 c prior to surge; withreapplied vrwmmax i2 1 for fusing (t= 10 ms) rate of rise of on-state current after triggering with ig = 150 ma to it - 30 a; dlg/dt = 0,25 a/ms gate to cathode average power dissipation (averaged over any 20 ms period) peak power dissipation temperatures storage temperature junction temperature thermal resistance from junction to mounting base from mounting base to heatsink with heatsink compound from junction to ambient in free air transient thermal impedance (t = 1 ms) BTY79-400r e vdsm* vrsm vdrm/vrrm vdwm/vrwm * max. max. max. max. 500 500 400 400 500r 1100 600 500 500 600r 1100 720 600 600 800 r 1100 960 800 800 1000r 1100 v 1100 v 1000 v 1000 v* 't(av) max- 1 a 't(rms) max. 16 a 'trm max- 75 a 'tsm max- 150 a ljt max. 112 a2s dlj/dt max. 50 a/ms pg(av) pgm tstg ti max. 0,5 w max. 5 w -55 to +125 c max. 125 c rthj-mb rth mb-h rth j-a ztfi j-mb 1,8 c/w 0,5 c/w 45 c/w 0,1 c/w
BTY79 series characteristics anode to cathode on-state voltage (measured under pulse conditions) lt=20a;tj = 25c rate of rise of off-state voltage that will not trigger any device; exponential method; vd = 2/3vdrmmax;tj=125c reverse current off-state cu rrent vd = vdwmmax;tj-125c latching current; tj = 25 c holding current; tj = 25 c gate to cathode voltage that will trigger all devices vo = 6v;tj = 25c voltage that will not trigger any device vd = vdrmmax;tj=125c current that will trigger all devices vd = 6 v;tj = 25c on request (see ordering note) switching characteristics gate-controlled turn-on time (tgt = td + tr) when switched from vd = vdrmmax to it ? 40 a; igt = 100 ma; dlg/dt = 5 a/ms; tj = 25 c circuit-commutated turn-off time when switched from i y = 40 a to vr > 50 v with -dl-r/dt = 10 a/ms; dvd/dt = 50 v/ms; tj = 1 15 c dvd/dt "r id il 'h vgt vgd 'gt 'gt *9t 200 3 3 150 75 1.5 200 30 20 v v/ms ma ma ma ma v mv ma ma typ, 2 ms typ. 35 jig.2a gate-controlled turn-on 1 time definition. fig.2b circuit-commutated turn-off time definition.
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